| PART |
Description |
Maker |
| ADXL377 |
3-Axis High <span style="text-transform: lowercase"><em>g</em> </span> Analog MEMS Accelerometer
|
Analog Devices
|
| AD5541A |
2.7 V to 5.5 V, Serial-Input, Voltage-Output, 16-/12-Bit <em><span style="text-transform: lowercase">nano</span></em>DAC™ in 8-lead 3 mm × 3 mm LFCSP
|
Analog Devices
|
| K4C89183AF K4C89083AF-GIFB K4C89083AF-AIFB K4C8909 |
288Mb x18 Network-DRAM2 Specification 288Mb x18网络DRAM2规范
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 250V; Case Size: 16x31.5 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 33uF; Voltage: 250V; Case Size: 12.5x20 mm; Packaging: Bulk
JT 55C 55#22M PIN PLUG
JT 8C 8#16 PIN PLUG
Thyristor / Diode Module; Repetitive Reverse Voltage Max, Vrrm:2200V; Current, It av:430A; Gate Trigger Voltage Max, Vgt:3V; Gate Trigger Current Max, Igt:200mA; Package/Case:LD43; di/dt:200A/ s RoHS Compliant: Yes
JT 55C 55#22 SKT PLUG
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MAX265-MAX266 MAX266BEPI MAX265ACPI MAX266AMJI MAX |
Pin and Resistor Programmed Universal Active Filters
Monostable multivibrator with Schmitt-trigger inputs 14-SOIC 0 to 70
Hex Buffers/Drivers With Open-Collector High-Voltage Outputs 14-SO 0 to 70
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
模拟滤波
|
| STK11C48-5P45 STK11C48-5P45I STK11C48-5P30I STK11C |
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:30mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:D-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:10mA
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:50mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:6A; Gate Trigger Current Max, Igt:35mA NVRAM中（EEPROM的基础
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| HEF40106 HEF40106B HEF40106BD HEF40106BF HEF40106B |
Hex inverting Schmitt trigger 六反相施密特触发
gates Hex inverting Schmitt trigger
HEF40106B; Hex inverting Schmitt trigger
Hex inverting Schmitt trigger; Package: SOT108-1 (SO14); Container: Tube HEX 1-INPUT INVERT GATE, PDSO14
Hex inverting Schmitt trigger; Package: SOT108-1 (SO14); Container: Reel Pack, SMD, 13"
|
List of Unclassifed Manufacturers
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| FFTONCHIP |
Fast Fourier Transform(傅立叶变
|
Altera Corporation
|
| PLSM-FFT |
Fast Fourier Transform(快速傅立叶变换芯片)
|
Altera Corporation
|
| Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| PI74STX1G14TX PI74STX1G14 PI74STX1G14CX |
SOTiny Gate STX Schmitt-Trigger Inverter
High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-SOIC -55 to 125
SOTiny™ Gate STX Schmitt-Trigger Inverter
|
Pericom Technology
PERICOM[Pericom Semiconductor Corporation]
Pericom Semiconductor Corp.
Pericom Semiconductor, Corp.
|
|
